Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Reexamination Certificate
2008-06-13
2010-10-19
Smoot, Stephen W (Department: 2813)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Responsive to electromagnetic radiation
C438S702000, C438S782000, C257SE31121
Reexamination Certificate
active
07816168
ABSTRACT:
A method for forming a color filter is provided. A substrate having a passivation layer thereon is provided. The passivation layer has at least one trench therein within a peripheral region of the substrate. A first color filter layer is formed over the passivation layer to fill the trench by performing a first spin-on coating process with a first spin rate. Thereafter, the first color filter layer is patterned so as to form a plurality of first color filter blocks in a display region of the substrate and expose a portion of the passivation layer. A second color filter layer is formed over the passivation layer by performing a second spin-on coating process with a second spin rate, which is larger than the first spin rate. Next, the second color filter layer is patterned to form a plurality of second color filter blocks between the first color filter blocks respectively.
REFERENCES:
patent: 5534720 (1996-07-01), Song et al.
patent: 5719074 (1998-02-01), Hawkins et al.
patent: 6285065 (2001-09-01), Levy
patent: 6632700 (2003-10-01), Fan et al.
patent: 7410822 (2008-08-01), Wu
patent: 7446386 (2008-11-01), Eristoff et al.
Hsu Winston
Margo Scott
Smoot Stephen W
Teng Min-Lee
United Microelectronics Corp.
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