Semiconductor device

Details Semiconductor device Semiconductor device

2009-04-14

2010-12-28

Chaudhari, Chandra (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257SE29081

Reexamination Certificate

active

07859015

ABSTRACT:
A semiconductor device is provided with a semiconductor region, a gate electrode, a source electrode and a drain electrode. The semiconductor region is formed on a semiconductor substrate surface and includes a first semiconductor portion of a first conducting type, a second semiconductor portion of a second conducting type, a band gap distinct from the substrate's band gap, more than two accumulated semiconductor layers, and junctions between the layers. The semiconductor layers each contain an impurity of the first conducting type. The gate electrode adjoins a heterojunction between the second semiconductor portion and the semiconductor substrate through a gate insulation film. The source electrode is coupled to the semiconductor region. The drain electrode is coupled to the semiconductor substrate.

REFERENCES:
patent: 5877515 (1999-03-01), Ajit
patent: 6057558 (2000-05-01), Yamamoto et al.
patent: 6246077 (2001-06-01), Kobayashi et al.
patent: 2005/0062048 (2005-03-01), Hayashi et al.
patent: 0 726 604 (1996-08-01), None
patent: 2003-318398 (2003-11-01), None
Shinsuke Harada et al., “8.5-mΩ·cm2600V Double-Epitaxial MOSFETs in 4H-SiC”, IEEE Electoron Device Letters, vol. 25, No. 5, May 2004, 3 pages.

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