Electricity: measuring and testing – Fault detecting in electric circuits and of electric components – Of individual circuit component or element
Reexamination Certificate
2009-01-13
2010-10-05
Nguyen, Ha Tran T (Department: 2829)
Electricity: measuring and testing
Fault detecting in electric circuits and of electric components
Of individual circuit component or element
C331S1170FE, C324S1540PB
Reexamination Certificate
active
07808266
ABSTRACT:
Apparatus and methods are disclosed for evaluating degradation of a transistor in a cross coupled pair of an RF oscillator independently. A MOS device can be coupled between a separated center-tap inductor. By appropriately sizing the MOS device and turning the MOS device on during operation of RF oscillator, a good contact can again be made that allows the oscillator to operate at design performance. By turning the MOS device off, the supplies can be separates such that I-V characteristics of both transistors of the cross-coupled pair may be obtained.
REFERENCES:
patent: 6597248 (2003-07-01), Shirai
patent: 6933731 (2005-08-01), Reddy et al.
patent: 6954111 (2005-10-01), Muramatsu et al.
patent: 7067842 (2006-06-01), Jayapalan et al.
patent: 7202754 (2007-04-01), Komurasaki et al.
patent: 7218132 (2007-05-01), Krishnan et al.
patent: 7605667 (2009-10-01), Liu et al.
patent: 2003/0162343 (2003-08-01), Altmann
patent: 2007/0018679 (2007-01-01), Kim
patent: 2008/0258827 (2008-10-01), Tsai
Krishnan Srikanth
Marsall Andrew
Brady III Wade J.
Garner Jacqueline J.
Isla Rodas Richard
Nguyen Ha Tran T
Telecky , Jr. Frederick J.
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