Memory elements having patterned electrodes and method of...

Details Memory elements having patterned electrodes and method of... Memory elements having patterned electrodes and method of...

2006-11-15

2010-02-16

Loke, Steven (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S529000, C365S148000, C438S257000

Reexamination Certificate

active

07663133

ABSTRACT:
A memory element having a resistance variable material and methods for forming the same are provided. The method includes forming a plurality of first electrodes over a substrate and forming a blanket material stack over the first electrodes. The stack includes a plurality of layers, at least one layer of the stack includes a resistance variable material. The method also includes forming a first conductive layer on the stack and etching the conductive layer and at least one of the layers of the stack to form a first pattern of material stacks. The etched first conductive layer forming a plurality of second electrodes with a portion of the resistance variable material located between each of the first and second electrodes.

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