Dielectric porcelain composition for use in electronic devices

Details Dielectric porcelain composition for use in electronic devices Dielectric porcelain composition for use in electronic devices

2005-08-11

2010-06-08

Group, Karl E (Department: 1793)

Compositions: ceramic

Ceramic compositions

Titanate, zirconate, stannate, niobate, or tantalate or...

Reexamination Certificate

active

07732361

ABSTRACT:
The invention intends to provide a dielectric porcelain composition for use in electronic devices which can be controlled in the temperature coefficient τf in particular in a negative direction and can shorten a sintering period while maintaining a high Qf value and a high dielectric constant. According to the invention, in conventional composition having a composition formula represented by XBa(Mg1/3Ta2/3)O3—Y(BazSr1-z)(Ga1/2Ta1/2)O3, when Mg is substituted by Ni to form a specific structure, the temperature coefficient τf can be controlled in a negative direction and the τf can be controlled in the range of 0.80 to −4.45 ppm/° C. while maintaining a high Qf value and a high dielectric constant, and even when a sintering period, which has been so far necessary substantially 50 hr, is reduced to 25 hr substantially one half the above, similar Qf value can be obtained.

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English Translation of Search Report issued in International Patent Application No. PCT/JP2005/014770 on Oct. 25, 2005.
Kim et al., “Microwave Dielectric Properties of Ba(Mg1/3Ta2/3)O3Ceramics With Partial Substitution of Mg by Ca or Ni,” Ceramic Transactions (1998), 32 (Dielectric Ceramics: Processing, Properties, and Applications), pp. 231-240, 1993, Fig 1, Tables 1, 2; Figs. 2, 3, 4, 5 6.
Reaney et al., “Ordering and Quality Factor in 0.95BaZn1/3Ta2/3O3-0.05SrGa1/2Ta1/2O3Production Resonators,” Journal of the European Ceramic Society, 2003, vol. 23, No. 16, p. 3021-3034, 2003, Table 1.

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