Phase change memory elements using self-aligned phase change...

Details Phase change memory elements using self-aligned phase change... Phase change memory elements using self-aligned phase change...

2006-04-04

2010-10-12

Nguyen, Cuong Q (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S002000, C257S003000, C257S005000, C257SE31131

Reexamination Certificate

active

07812334

ABSTRACT:
A phase change memory element and method of forming the same. The memory element includes a substrate supporting a first electrode. An insulating material element is positioned over the first electrode, and a phase change material layer is formed over the first electrode and surrounding the insulating material element such that the phase change material layer has a lower surface that is in electrical communication with the first electrode. The memory element also has a second electrode in electrical communication with an upper surface of the phase change material layer.

REFERENCES:
patent: 7348590 (2008-03-01), Happ
patent: 2003/0047762 (2003-03-01), Lowrey
patent: 2004/0124503 (2004-07-01), Harshfield
patent: 2005/0104231 (2005-05-01), Chiang et al.
patent: 2005/0212037 (2005-09-01), Pinnow et al.
patent: 2006/0006374 (2006-01-01), Chang
patent: 2006/0175599 (2006-08-01), Happ
patent: 2006/0208847 (2006-09-01), Lankhorst et al.
patent: 1 677 372 (2006-07-01), None
Notification of Transmittal of International Search Report and Written Opinion of the International Searching Authority Issued Oct. 31, 2007, copies of International Search Report and Written Opinion.

Affiliated with

Also associated with

Rating

Phase change memory elements using self-aligned phase change... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Phase change memory elements using self-aligned phase change..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Phase change memory elements using self-aligned phase change... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4201152