Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates
Reexamination Certificate
2008-07-07
2010-06-29
Garber, Charles D (Department: 2812)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
C257SE21211
Reexamination Certificate
active
07745307
ABSTRACT:
In a method of manufacturing an inkjet head, a silicon dioxide (SiO2) layer is produced on the surface of first silicon member formed from single-crystal silicon. Next, a glass layer formed of borosilicate glass or the like is sputtered onto the surface of the silicon dioxide (SiO2) layer. A silicon oxide (SiOx, x<2) layer is then formed on the surface of a second silicon member. The first and second silicon members and are bonded together by applying heat at about 450° C. with heaters, as a DC voltage is applied across electrode terminals. As a result, a silicon dioxide (SiO2) layer is formed at the interface of the glass layer and silicon oxide (SiOx, x<2) layer, anodically bonding the two layers.
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Machida Osamu
Nagata Jun
Umeda Takao
Garber Charles D
Isaac Stanetta D
Ricoh Printing Systems Ltd.
Whitham Curtis Christofferson & Cook PC
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