Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2006-12-27

2010-06-29

Tran, Minh-Loan T (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

C257SE27132, C257S072000, C257SE27012, C257SE27116, C257SE29137, C257SE29273, C257SE49004, C257SE21535, C257SE27131, C349S043000, C349S046000

Reexamination Certificate

active

07745824

ABSTRACT:
In a semiconductor device and a method of manufacturing the semiconductor device, the source wires126of a pixel portion205are formed of material having low resistance (representatively, aluminum, silver, copper). The source wires of a driving circuit are formed in the same process as the gate wires162of the pixel portion and a pixel electrode163.

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