Fishing – trapping – and vermin destroying
Patent
1987-10-02
1989-01-24
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
437 26, 437228, 156643, 156653, H01L 21425, H01L 21467
Patent
active
048001708
ABSTRACT:
A process for forming a buried patterned silicon oxide layer in a silicon chip in which the layer is formed by implanting oxygen into the chip through a mask of silicon oxide on the surface of the silicon chip. The silicon oxide mask is formed to have essentially vertical side walls by interposing an irradiation step between a pair of isotropic wet etching steps in its formation.
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Cellar, G. K. and Robinson, McD., "Seeded Recrystallization of Thick Polysilicon Films on Oxidized 3-in. Wafers," Applied Physics Letters, vol. 42, No. 1, Jan. 1983, pp. 99-101.
Jastrzebski, L., "Comparison of Different SOI Technologies", RCA Review, vol. 44, Jun. 1983, pp. 250-268.
Tuppen, G. C.; Taylor, M. R.; Hemment, P. L. F.; Arrowsmith, R. P., "Effect of Implantation Temperature on the Properties of Buried Oxide Layers in Silicon formed by Oxygen Ion Implantation," Applied Physics Letters, vol. 45, No. 1, Jul. 1984, pp. 57-59.
Jain Kailash C.
MacIver Bernard A.
Chaudhuri Olik
General Motors Corporation
Wallace Robert J.
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