Metalorganic chemical vapor deposition (MOCVD) growth of...

Details Metalorganic chemical vapor deposition (MOCVD) growth of... Metalorganic chemical vapor deposition (MOCVD) growth of...

2007-12-11

2010-11-30

Parker, Kenneth A (Department: 2822)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

C438S046000, C257S102000, C257S103000, C257SE21001, C257SE33001

Reexamination Certificate

active

07842527

ABSTRACT:
A method of device growth and p-contact processing that produces improved performance for non-polar III-nitride light emitting diodes and laser diodes. Key components using a low defect density substrate or template, thick quantum wells, a low temperature p-type III-nitride growth technique, and a transparent conducting oxide for the electrodes.

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