Method of measuring on-resistance in backside drain wafer

Details Method of measuring on-resistance in backside drain wafer Method of measuring on-resistance in backside drain wafer

2008-11-29

2010-12-28

Nguyen, Ha Tran T (Department: 2829)

Electricity: measuring and testing

Fault detecting in electric circuits and of electric components

Of individual circuit component or element

C324S765010, C257S048000, C438S018000

Reexamination Certificate

active

07859291

ABSTRACT:
A method of measuring on-resistance in a backside drain wafer includes providing a wafer having a first MOS transistor and a second MOS transistor each having a source and also sharing a drain provided at a backside of the wafer, and then forming a current flow path passing through the first and second MOS transistors, and then measuring a resistance between the sources of the first and second MOS transistors. Accordingly, an on-resistance in a backside drain wafer can be measured without using a chuck.

REFERENCES:
patent: 7365559 (2008-04-01), Colbeck
patent: 7394276 (2008-07-01), Gebara et al.
patent: 7615991 (2009-11-01), Jang
patent: 2009/0256149 (2009-10-01), Ho et al.
patent: 2009/0309097 (2009-12-01), Hsieh

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