Multi-plasma neutral beam source and method of operating

Radiant energy – Electrically neutral molecular or atomic beam devices and...

Reexamination Certificate

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C315S111810, C315S111210, C216S067000, C356S316000

Reexamination Certificate

active

07732759

ABSTRACT:
Method and system for producing a neutral beam source is described. The neutral beam source comprises a plasma generation system for forming a first plasma in a first plasma region, a plasma heating system for heating electrons from the first plasma region in a second plasma region to form a second plasma, and a neutralizer grid for neutralizing ion species from the second plasma in the second plasma region. Furthermore, the neutral beam source comprises an electron acceleration member configured to accelerate the electrons from the first plasma region into the second plasma region. Further yet, the neutral beam source comprises a pumping system that enables use of the neutral beam source for semiconductor processing applications, such as etching processes.

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patent: 2009/0236314 (2009-09-01), Chen
U.S. Office Action issued in U.S. Appl. No. 11/869,656 mailed Jan. 4, 2010.

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