Thick contacts for ultra-thin silicon on insulator films

Details Thick contacts for ultra-thin silicon on insulator films Thick contacts for ultra-thin silicon on insulator films

1989-03-20

1992-05-26

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 21, 357 237, H01L 21265, H01L 2186

Patent

active

051167719

ABSTRACT:
CMOS devices on SOI and a method for making such devices with ultra-thin Si channel regions and thick Si drain and source regions for good contact surfaces are described.

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patent: 4700461 (1987-10-01), Choi et al.
patent: 4717686 (1988-01-01), Jacobs et al.
"High Performance SOIMOSFET Using Ultra-Thin SOI Film", Yoshimi et al., IEDM 87, pp. 640-643.
"Self-Aligned Contact Schemes for Source-Drains in Submicron Devices", W. T. Lynch, IEDM 87, pp. 354-357.
"Rapid Thermal Growth of Thin Silicon Dielectrics for ULSI Applications", J. Nulman, Proc. 1st Int'nl Symp on ULSI Science and Technology, Proc. vol. 87-11, Electrochemical Society, (1987), p. 141.
"Local Oxidation of Silicon and Its Application in Semiconductor-Device Technology", Appels et al., Phillips Res. Repts 25, pp. 118-132, 1970.
"Application of Selective Silicon Epitaxial Growth for CMOS Technology", Nagao et al., IEEE Transactions on Electron Devices, vol. ED-33, No. 11, Nov. 1986, pp. 1738-1744.
"A Metal-Gate Self-Aligned MOSFET Using Nitride Oxide", Schmidt, et al., IEEE Transactions on Electron Devices, vol. ED-32, No. 3, Mar. 1985, pp. 643-648.
"Local Oxidation of Silicon; New Technological Aspects", Appels, et al., Philipps. Res. Repts 26, 157-165, 1971.
"Novel SOI CMOS Design Using Ultra Thin Near Intrinsic Substrate", Malhi et al., IEEE 1982, pp. 107-110.
"A High Performance Submicrometer CMOS/SOI Technology Using Ultrathin Silicon Films on SIMOX", Vasudev et al., pp. 61-62, Technical Digest of 1988 Symp. on VLSI Technol., May 1988, IEEE.

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