Combined ion and molecular beam apparatus and method for deposit

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118 501, 118 58, 118623, 118715, 4272552, 4272553, 4272557, 427294, 427295, 437250, B05D 306

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active

048001007

ABSTRACT:
A method and apparatus is described for combined deposition of thin films of materials from an ion beam source and a molecular beam source in a single reactor.

REFERENCES:
"Molecular Beam Epitaxy of Layered Dy-BA-CU-O Compounds" Schlom et al. (Unpublished).
"Epitaxial Growth and Heterostructure Synthesis by Ion Beam Deposition (IBD)", Herbots et al., pp. 335-349, Proceedings of the Northeast Regional Meeting of the Metallurigical Society, Murray Hill, NJ-May 1-2, 1986.
"Ion Beams with Applications to Ion Implantation", Ch. 5, pp. R. G. Wilson et al., Robert E. Krieger Publishing, Huntington, NY (1979).
"Low-Energy Ion Beam Oxidation of Silicon", S. S. Todorov et al., IEEE Electr. Dev. Lett., vol. EDL-7, 8 468 (1986).
"Ion Beam Deposition of Materials at 40-200 eV: Effect of Ion Energy and Substrate Temperature on Interface, Thin Film and Damage Formation", N. Herbots et al., Mat. Res. Soc. Symp. Proc., vol. 51, 1985 Materials Research Society.
"Ion Beam Deposition", Appleton et al., MRS Bulletin (1987).
J. H. Freeman et al., "The Epitaxial Synthesis of Diamond Deposition of Low Energy Carbon Ions", Vacuum, vol. 34, Nos. 1-2 (1984).
"Semiconductor-Based Heterostructure Formation Using Low Energy Ion Beams": Ion Beam Deposition (IBD) & Combined Ion and Molecular Beam Deposition (CIMD), N. Herbots et al. (Unpublished).
"Ion-Solid Interactions During Ion Beam Deposition of Ge and Si on Si at Very Low Ion Energies (0-200 eV Range)", Herbots et al., Nuclear Instruments and Methods in Physics Research B13 (1986), 250-258, No. Holland, Amsterdam.
"Low Temperature Epitaxial Growth of Si and Ge and Fabrication of Isotopic Heterostructures by Direct Ion Beam Deposition", Appleton et al., Nuclear Instruments and Methods in Physics Research B19/20 (1987, 975-982, No. Holland, Amsterdam.
"Direct Formation of Thin Films and Epitaxial Overlayers at Low Temperatures Using a Low-Energy (10-500 ev) Ion Beam Deposition System", Zuhr et al., MRS Proceedings, Spring MRS 87, Anaheim, CA.

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