Process for collective manufacturing of small volume high...

Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Thinning of semiconductor substrate

Reexamination Certificate

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C438S737000, C438S752000, C438S753000

Reexamination Certificate

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07838393

ABSTRACT:
The invention relates to a process for collective manufacturing of cavities and/or membranes (24), with a given thickness d, in a wafer said to be a semiconductor on insulator layer, comprising at least one semiconducting surface layer with a thickness d on an insulating layer, this insulating layer itself being supported on a substrate, this process comprising:etching of the semiconducting surface layer with thickness d, the insulating layer forming a stop layer, to form said cavities and/or membranes in the surface layer.

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International Search Report, PCT/EP2007/054106, dated Aug. 2, 2007.

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