Diamond based substrate for electronic devices

Details Diamond based substrate for electronic devices Diamond based substrate for electronic devices

2006-03-20

2010-11-30

Kunemund, Robert M (Department: 1714)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

C117S084000, C117S088000, C117S090000, C117S097000, C117S101000, C117S106000, C117S915000, C117S951000

Reexamination Certificate

active

07842134

ABSTRACT:
The invention relates to a method of manufacture of a substrate for fabrication of semiconductor layers or devices, comprising the steps of providing a wafer of silicon including at least one first surface suitable for use as a substrate for CVD diamond synthesis, growing a layer of CVD diamond of predetermined thickness and having a growth face onto the first surface of the silicon wafer, reducing the thickness of the silicon wafer to a predetermined level, and providing a second surface on the silicon wafer that is suitable for further synthesis of at least one semiconductor layer suitable for use in electronic devices or synthesis of electronic devices on the second surface itself and to a substrate suitable for GaN device growth consisting of a CVD diamond layer intimately attached to a silicon surface.

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A. Aleksov, et al., “Silicon-On-Diamond: An Advanced Silicon-On-Insulator Technology”, Diamond and Related Materials, vol. 14, No. 3-7, XP 004857074, pp. 308-313, 2005.
C. Z. Gu, et al., “Sod Wafer Technology”, Microelectronic Engineering, vol. 66, No. 1-4, XP 004421560, pp. 510-516, 2003.

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