Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2008-12-23
2010-11-23
Maldonado, Julio J (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S226000, C257S227000, C257S258000, C257S293000, C257SE31079, C257SE31084, C257SE31083
Reexamination Certificate
active
07838955
ABSTRACT:
An image sensor includes a metal interconnection and readout circuitry over a first substrate, an image sensing device, and an ion implantation isolation layer. The image sensing device is over the metal interconnection, and an ion implantation isolation layer is in the image sensing device. The image sensing device includes first, second and third color image sensing units, and ion implantation contact layers. The first, second and third color image sensing units are stacked in or on a second substrate. The ion implantation contact layers are electrically connected to the first, second and third color image sensing units, respectively.
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Dongbu Hi-Tek Co., Ltd.
Fortney Andrew D.
Maldonado Julio J
The Law Offices of Andrew D. Fortney
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