Integrated circuit having laterally dielectrically isolated...

Details Integrated circuit having laterally dielectrically isolated... Integrated circuit having laterally dielectrically isolated...

2006-07-24

2010-10-19

Warren, Matthew E (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

C257S395000, C257S396000, C257S397000, C257S508000, C257S520000, C257SE29112, C438S294000

Reexamination Certificate

active

07816758

ABSTRACT:
An integrated circuit is disclosed that includes a first layer made of active semiconductor material and extending along a first side of a buried layer, and trench structures, which cut through the layer made of active semiconductor material and have dielectric wall regions, whereby the dielectric wall regions isolate electrically subregions of the layer, made of active semiconductor material in the lateral direction, and whereby the trench structures, furthermore, have first inner regions, which are filled with electrically conductive material and contact the buried layer in an electrically conductive manner. The integrated circuit is notable in that the first wall regions of the trench structures completely cut through the buried layer and the second wall regions of the trench structures extend into the buried layer, without cutting it completely. Furthermore, a method for manufacturing such an integrated circuit is disclosed.

REFERENCES:
patent: 5241211 (1993-08-01), Tashiro
patent: 5494846 (1996-02-01), Yamazaki
patent: 6184101 (2001-02-01), Tsuzuki
patent: 6316336 (2001-11-01), Blanchard
patent: 6365447 (2002-04-01), Hebert et al.
patent: 6383892 (2002-05-01), Colt, Jr.
patent: 2002/0008299 (2002-01-01), Leonardi
patent: 2003/0017710 (2003-01-01), Yang et al.

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