Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2006-08-25

2010-06-29

Coleman, W. David (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

C257SE23011, C257SE21597

Reexamination Certificate

active

07745939

ABSTRACT:
A semiconductor device50is constructed to connect Al electrode pads20and rewiring patterns52via through electrodes56and flip-chip connect the rewiring patterns52of a semiconductor element14and wiring patterns24on a wiring substrate12via solder bumps58. A device forming layer18and a plurality of Al electrode pads20are formed on an upper surface of the semiconductor element14. Through holes54passing through the semiconductor element14are provided between the Al electrode pads20and the rewiring patterns52by the dry etching, and through electrodes56are formed in insides of the through holes54by the Cu plating. The device forming layer18is arranged on an upper surface of the semiconductor element14to make a light reception and a light emission easily.

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Kenji Takahashi et al. “Process Integration of 3D Chip Stack with Vertical Interconnection.”Electronic Components and Technology Conference, 2004, pp. 601-609.

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