Semiconductor device and method for fabricating the same

Details Semiconductor device and method for fabricating the same Semiconductor device and method for fabricating the same

2007-11-21

2010-12-07

Tran, Thien F (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

C257S189000, C257S192000, C257S194000, C257SE29246

Reexamination Certificate

active

07847319

ABSTRACT:
A semiconductor device has a Group III nitride semiconductor layer and a gate electrode formed on the Group III nitride semiconductor layer. The gate electrode contains an adhesion enhancing element. A thermally oxidized insulating film is interposed between the Group III nitride semiconductor layer and the gate electrode.

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