Sputtering target used for production of reflective mask...

Details Sputtering target used for production of reflective mask... Sputtering target used for production of reflective mask...

2009-01-14

2010-12-21

Rosasco, Stephen (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

C204S298130

Reexamination Certificate

active

07855036

ABSTRACT:
To provide a sputtering target to be used for production of an EUV mask blank, capable of preventing particles by film peeling even when formation of a reflective multilayer film as a reflective layer and a Ru layer as a protective layer is carried out at a production level using actual machines for a large number of cycles. A sputtering target for forming a ruthenium (Ru) layer in a reflective layer for reflecting EUV light on a substrate, which contains Ru and at least one element selected from the group consisting of boron (B) and zirconium (Zr) in a total content of B and Zr of from 5 at % to 50 at %.

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U.S. Appl. No. 12/578,648, filed Oct. 14, 2009, Hayashi, et al.

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