Method of forming embrittled areas inside wafer for division

Details Method of forming embrittled areas inside wafer for division Method of forming embrittled areas inside wafer for division

2007-07-24

2010-06-01

Paik, Sang Y (Department: 3742)

Electric heating

Metal heating

By arc

C438S460000

Reexamination Certificate

active

07728257

ABSTRACT:
A method of forming embrittled areas in multiple layers inside a wafer so as to enable the wafer to be divided correctly even at areas where embrittled areas intersect. In a first direction embrittling step an embrittled area is formed as a bottom layer, in a second direction embrittling step embrittled areas are formed as a bottom layer and a second layer, in the first direction embrittling step the embrittled areas are formed as a second layer and a third layer, and thereafter, the second direction embrittling step and the first direction embrittling step are alternately implemented, and finally, in the second direction embrittling step, embrittled area is formed as a top layer, so that a length of an unprocessed area is contained within a range that does not interfere with division.

REFERENCES:
patent: 6992026 (2006-01-01), Fukuyo et al.
patent: 7141443 (2006-11-01), Nagai et al.
patent: 2002-192370 (2002-07-01), None

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