Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2008-09-22
2010-12-14
Harvey, Minsun (Department: 2828)
Coherent light generators
Particular active media
Semiconductor
C372S050121, C372S050120, C372S050100, C372S049010
Reexamination Certificate
active
07852898
ABSTRACT:
On a first region that is a part of one main face of a semiconductor substrate1, a first semiconductor laser structure10is formed so as to have a first lower cladding layer3, a first active layer4with a first quantum well structure and first upper cladding layers5, 7, which are layered in this order from the semiconductor substrate side, thereby forming a first resonator. On a second region that is different from the first region, a second semiconductor laser structure20is formed so as to have a second lower cladding layer13, a second active layer14with a second quantum well structure and a second upper cladding layer15, 17, which are layered in this order, thereby forming a second resonator. End face coating films31, 32are formed on facets of the first and the second resonators, and a nitrogen-containing layer30is formed between the facets of the first and the second resonators and the facet coating film. In the semiconductor laser device provided with a high-output dual-wavelength lasers that are formed monolithically, the decrease of the COD level during the high-output operation of the laser can be suppressed.
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Kashima Takayuki
Makita Kouji
Yokoyama Takeshi
Hamre Schumann Mueller & Larson P.C.
Harvey Minsun
Panasonic Corporation
Stafford Patrick
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