Method of improving programming precision in flash memory

Static information storage and retrieval – Floating gate – Particular biasing

Reexamination Certificate

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C365S185050, C365S185120, C365S185170, C365S185240, C365S221000

Reexamination Certificate

active

07660166

ABSTRACT:
Data are stored in cells of a flash memory by assigning a first portion of the data to be stored in a first cell and a second portion of the data to be stored in one or more second cells. The first cell is programmed to store the first portion in accordance with the second portion. The second cell(s) is/are programmed to store the second portion. At least a portion of the programming of the first cell is effected before any of the programming of the second cell(s).

REFERENCES:
patent: 5386422 (1995-01-01), Endoh et al.
patent: 5513193 (1996-04-01), Hashimoto
patent: 5570315 (1996-10-01), Tanaka et al.
patent: 5774397 (1998-06-01), Endoh et al.
patent: 5867429 (1999-02-01), Chen et al.
patent: 5930167 (1999-07-01), Lee et al.
patent: 6046935 (2000-04-01), Takeuchi et al.
patent: 6061280 (2000-05-01), Aritome
patent: 6222762 (2001-04-01), Guterman et al.
patent: 6456528 (2002-09-01), Chen
patent: 6522580 (2003-02-01), Chen et al.
patent: 6781877 (2004-08-01), Cernea et al.
patent: 6859397 (2005-02-01), Lutze et al.
patent: 6888758 (2005-05-01), Hemink et al.
patent: 6917545 (2005-07-01), Gallo et al.
patent: 6922364 (2005-07-01), Kojima
patent: 7023736 (2006-04-01), Cernea et al.
patent: 7046568 (2006-05-01), Cernea
patent: 7120051 (2006-10-01), Gorobets et al.
patent: 7173863 (2007-02-01), Conley et al.
patent: 7187585 (2007-03-01), Li et al.
patent: 7196928 (2007-03-01), Chen
patent: 7196931 (2007-03-01), Cernea et al.
patent: 7237074 (2007-06-01), Guterman et al.
patent: 7280427 (2007-10-01), Shin
patent: 7286398 (2007-10-01), Yano et al.
patent: 7400535 (2008-07-01), Li
patent: 7443729 (2008-10-01), Li et al.
patent: 7495953 (2009-02-01), Li
patent: 7506113 (2009-03-01), Li
patent: 2005/0057965 (2005-03-01), Cernea et al.
patent: 2005/0169057 (2005-08-01), Shibata et al.
patent: 2005/0254309 (2005-11-01), Kwon et al.
patent: 2005/0276101 (2005-12-01), Chen et al.
patent: 2005/0286299 (2005-12-01), Tomita et al.
patent: 2006/0140007 (2006-06-01), Cernea et al.
patent: 2006/0158947 (2006-07-01), Chan et al.
patent: 2007/0061502 (2007-03-01), Lasser et al.
patent: 2007/0189073 (2007-08-01), Aritome et al.
patent: 2007/0206426 (2007-09-01), Mokhlesi
patent: 2007/0291556 (2007-12-01), Kamei
patent: 2008/0019185 (2008-01-01), Li
patent: 2008/0019188 (2008-01-01), Li
patent: 2008/0019193 (2008-01-01), Li et al.
patent: 2008/0158949 (2008-07-01), Mui et al.
patent: 2008/0180996 (2008-07-01), Lasser
patent: 2008/0181000 (2008-07-01), Lasser
patent: 2009/0073771 (2009-03-01), Li
patent: WO 2005/096316 (2005-10-01), None
patent: WO 2008/083132 (2008-07-01), None
patent: WO 2008/083132 (2008-07-01), None
Brown et al., “Nonvolatile Semiconductor Memory Technology,” IEEE Press, Section 1.2, 1998, pp. 9-25.
Chan et al., “A True Single-Transistor Oxide-Nitride-Oxide EEPROM Device,” IEEE Electron Device Letters, vol. EDL-8, No. 3, Mar. 1987, pp. 93-95.
Eitan et al., “NROM: A Novel Localized Trapping, 2-Bit Nonvolatile Memory Cell,” IEEE Electron Device Letters, vol. 21, No. 11, Nov. 2000, pp. 543-545.
Nozaki et al., “A 1-Mb EEPROM With MONOS Memory Cell for Semiconductor Disk Application,” IEEE Journal of Solid-State Circuits, vol. 26, No. 4, Apr. 1991, pp. 497-501.
EPO/ISA, “Notification of Transmittal of the International Search Report and the Written Opinion of the International Searching Authority, or the Declaration,” corresponding International Patent Application No. PCT/IL2008/000086, mailed on Jun. 23, 2008, 13 pages.
USPTO, “Office Action,” mailed in related U.S. Appl. No. 11/836,157 on Apr. 3, 2009, 27 pages.
USPTO, “Notice of Allowance and Fee(s) Due,” corresponding in related U.S. Appl. No. 11/856,639 on Aug. 20, 2009, 12 pages.
USPTO, “Notice of Allowance and Fee(s) Due,” mailed in related U.S. Appl. No. 11/836,157 on Sep. 23, 2009, 48 pages.

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