Method and apparatus for controlling composition profile of...

Coating processes – With post-treatment of coating or coating material – Heating or drying

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C438S095000, C438S102000, C438S104000

Reexamination Certificate

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07854963

ABSTRACT:
The present invention relates to method and apparatus for preparing thin films of semiconductor films for radiation detector and photovoltaic applications. In one aspect, the present invention is directed to a method of forming a Cu(In,Ga)(S,Se)2layer with substantially uniform Ga distribution. In a particular aspect, the method includes depositing a precursor film on the base, the precursor film including Cu, In and Ga, sulfurizing the precursor film thus forming a sulfurized precursor layer with a substantially uniform Ga distribution, and selenizing the sulfurized precursor layer to reduce the sulfur concentration therein and obtain the Cu(In,Ga)(S,Se)2layer with substantially uniform Ga distribution. In a further aspect, the method also includes the step of selenizing the precursor film.

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