Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2008-10-03

2010-11-23

Monbleau, Davienne (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S183000, C257SE21470, C257SE29001, C438S060000, C438S167000, C438S172000

Reexamination Certificate

active

07838906

ABSTRACT:
A semiconductor device1includes a substrate2having on a main surface thereof a central area and a peripheral area which surrounds the central area and is exposed, a semiconductor layer4which is formed on the main surface of the substrate2, is made of a material harder than the substrate2, is in the shape of a mesa, and has a steep side over the exposed peripheral area, and an insulating film12S provided on a side surface of the semiconductor layer4.

REFERENCES:
patent: 2006/0138457 (2006-06-01), Otsuka et al.
patent: 3-3936 (1991-01-01), None

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