Method for manufacturing semiconductor device and...

Details Method for manufacturing semiconductor device and... Method for manufacturing semiconductor device and...

2008-02-27

2010-12-21

Mandala, Victor A (Department: 2826)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C257S408000, C257SE21129, C257SE29263, C438S435000, C438S437000, C438S522000

Reexamination Certificate

active

07855125

ABSTRACT:
A method for manufacturing a semiconductor device includes: forming a groove in a semiconductor substrate and embedding an element isolation film made of a silicon oxide film in the groove; forming a silicon nitride film on the element isolation film; forming an oxidized silicon nitride film on the surface of the element isolation film through thermal treatment of the element isolation film and the silicon nitride film; and removing the silicon nitride film.

REFERENCES:
patent: 6268266 (2001-07-01), Hwang et al.
patent: 2002/0185693 (2002-12-01), Yasuda et al.
patent: 2003/0222318 (2003-12-01), Tanaka et al.
patent: A-2002-009144 (2002-01-01), None
patent: A-2006-339501 (2006-12-01), None

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