Methods for etching devices used in lithography

Details Methods for etching devices used in lithography Methods for etching devices used in lithography

2008-10-20

2010-06-08

Huff, Mark F (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

C430S311000

Reexamination Certificate

active

07732106

ABSTRACT:
Methods for etching devices used for lithography. In one aspect, a method includes etching, in a single etch, a first region and a second region on a substrate. The first region is to attenuate an intensity of the zero diffraction order of a radiation for patterning of a microelectronic device to a first extent. The second region is to attenuate the intensity of the zero diffraction order of the radiation to a second extent. The second extent being sufficiently different from the first extent to improve a quality of the patterned microelectronic device.

REFERENCES:
patent: 5300786 (1994-04-01), Brunner et al.
patent: 5446521 (1995-08-01), Hainsey et al.
patent: 5541026 (1996-07-01), Matsumoto
patent: 5578402 (1996-11-01), Watanabe
patent: 5633102 (1997-05-01), Toh et al.
patent: 5663102 (1997-09-01), Park
patent: 5840447 (1998-11-01), Peng
patent: 5932376 (1999-08-01), Liu et al.
patent: 6440616 (2002-08-01), Izuha et al.
patent: 6541165 (2003-04-01), Pierrat
patent: 6623895 (2003-09-01), Chen et al.
patent: 6864958 (2005-03-01), Bleeker et al.
patent: 6994940 (2006-02-01), Nakao
patent: 7033708 (2006-04-01), Tejnil
patent: 2001/0003026 (2001-06-01), Lin et al.
patent: 2002/0132173 (2002-09-01), Rolfson
patent: 2003/0039893 (2003-02-01), Farnsworth et al.
patent: 2003/0219096 (2003-11-01), Sewell
patent: 2004/0029023 (2004-02-01), Misaka
patent: 2005/0255388 (2005-11-01), Tejnil et al.
patent: 0 090 924 (1983-10-01), None
patent: 11-119412 (1999-04-01), None
patent: P2001-272764 (2001-10-01), None
patent: 2003-257853 (2003-09-01), None
patent: P2004-048009 (2004-02-01), None
patent: 576947 (2004-02-01), None
patent: WO02/44817 (2002-06-01), None
patent: WO 2004/019079 (2004-03-01), None
Gordon, R., et al., “Design and analysis of manufacturable alternating phase-shifting masks”,Proc. SPIE—The International Society for Optical Engineering,vol. 3546, pp. 606-616, 18thAnnual BACUS Symposium on Photomask Technology and Management, Brian J. Grenon; Frank E. Abboud; Eds. (Dec. 1998).
Levinson, H.,Principles of Lithography,SPIE—The International Society for Optical Engineering, p. 274, formula 8.18, (2001).
Rieger, M., et al., “Layout design methodologies for sub-wavelength manufacturing”,Proc. 38th Conf. Design Automation,Annual ACM IEEE Design Automation Conference, Las Vegas, NV, USA, pp. 85-88 (2001).
Ronse, K., et al., Semiconductor Fabtech 10th Edition: Resolution Enhancement Techniques in Optical Lithography, pp. 241-244 (Feb. 2005).
International Preliminary Report on Patentability, dated Nov. 14, 2006, in corresponding International Application No. PCT/US2005/14972.
International Search Report and Written Opinion, dated Nov. 29, 2005, in corresponding International Application No. PCT/US2005/14972.
Office Action, dated Sep. 21, 2007, issued in corresponding Korean Application No. 2006-7023852.
Office Action, dated Jan. 9, 2008, issued in corresponding Korean Application No. 2006-7023852.
Office Action, dated May 27, 2008, issued in corresponding Korean Application No. 2006-7023852.
Office Action, dated Jun. 29, 2006, issued in corresponding Taiwan Application No. 984114123.
Office Action, dated Jun. 28, 2007, issued in corresponding U.S. Appl. No. 10/846,403, now U.S. Patent No. 7,438,997.
Response to Office Action, dated Nov. 28, 2007, issued in corresponding U.S. Appl. No. 10/846,403, now U.S. Patent No. 7,438,997.
Final Office Action, dated Jan. 29, 2008, issued in corresponding U.S. Appl. No. 10/846,403, now U.S. Patent No. 7,438,997.
Response to Final Office Action, dated Apr. 29, 2008, issued in corresponding U.S. Appl. No. 10/846,403, now U.S. Patent No. 7,438,997.
Notice of Allowance, dated Jun. 13, 2008, issued in corresponding U.S. Appl. No. 10/846,403, now U.S. Patent No. 7,438,997.
Office Action, dated Feb. 18, 2005, issued in related U.S. Appl. No. 10/442,432, now U.S. Patent No. 7,033,708.
Response to Office Action, dated Jun. 23, 2005, issued in related U.S. Appl. No. 10/442,432, now U.S. Patent No. 7,033,708.
Response to Office Action, dated Aug. 4, 2005, issued in related U.S. Appl. No. 10/442,432, now U.S. Patent No. 7,033,708.
Notice of Allowance, dated Nov. 17, 2005, issued in related U.S. Appl. No. 10/442,432, now U.S. Patent No. 7,033,708.
Amendment After Allowance, dated Feb. 13, 2006, issued in related U.S. Appl. No. 10/442,432, now U.S. Patent No. 7,033,708.
Office Action, dated Apr. 23, 2009, issued in Taiwan Application Serial No. 94114123.
Office Action, dated May 8, 2009, issued in China Application Serial No. 20058001552.9.
Office Action, dated Sep. 14, 2009, issued in Japan Application Serial No. P2007-513187.

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