Semiconductor device using MEMS technology

Details Semiconductor device using MEMS technology Semiconductor device using MEMS technology

2006-01-30

2010-02-02

Purvis, Sue (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

C257S415000, C257S416000, C257S252000, C257S254000, C257SE27006

Reexamination Certificate

active

07655995

ABSTRACT:
A semiconductor device using a MEMS technology according to an example of the present invention comprises a cavity, a lower electrode provided in a lower part of the cavity, an actuator provided in an upper part or inside of the cavity, an upper electrode connected to the actuator, and a conductive layer in contact with the lower electrode outside the cavity via a contact hole whose bottom face is provided above an upper face of the lower electrode in the cavity.

REFERENCES:
patent: 4669160 (1987-06-01), Harnden, Jr. et al.
patent: 6198208 (2001-03-01), Yano et al.
patent: 6355498 (2002-03-01), Chan et al.
patent: 6359374 (2002-03-01), Dausch et al.
patent: 6377438 (2002-04-01), Deane et al.
patent: 2002/0050882 (2002-05-01), Hyman et al.
patent: 2003/0020173 (2003-01-01), Huff et al.
patent: 2003-117897 (2003-04-01), None

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