Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Thinning of semiconductor substrate
Reexamination Certificate
2005-03-11
2010-06-15
Tran, Minh-Loan T (Department: 2826)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Thinning of semiconductor substrate
C438S096000, C438S365000, C438S482000, C438S149000, C438S745000, C257SE31041, C257SE27100, C257SE29117, C257SE21411, C257SE33075, C257SE31131, C257SE23080, C257SE23101, C257S675000, C257S706000, C257S712000, C257S059000, C257S072000, C257SE21228
Reexamination Certificate
active
07736997
ABSTRACT:
A flexible electronic device excellent in heat liberation characteristics and toughness and a production method for actualizing thereof in low cost and with satisfactory reproducibility are provided. A protection film is adhered onto the surface of a substrate on which surface a thin film device is formed. Successively, the substrate is soaked in an etching solution to be etched from the back surface thereof so as for the residual thickness of the substrate to fall within the range larger than 0 μm and not larger than 200 μm. Then, a flexible film is adhered onto the etched surface of the substrate, and thereafter the protection film is peeled to produce a flexible electronic device.
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Asano, Akihiko and Kinoshita, Tomoatsu. “Low-Temperature Polycrystalline-Silicon TFT Color LCD Panel Made of Plastic Substrates.” Society for Information Display 2002 International Symposium Digest of Technical Papers. May 2002: pp. 1196 to 1199.
Lopez Fei Fei Yeung
NEC Corporation
Sughrue & Mion, PLLC
Tran Minh-Loan T
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