Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2008-10-14

2010-06-29

Wilczewski, Mary (Department: 2822)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S253000, C257SE21664

Reexamination Certificate

active

07745232

ABSTRACT:
According to the present invention, contact plugs are formed by a CVD method without deteriorating the properties of the ferroelectric capacitor in a semiconductor device having a fine ferroelectric capacitor. Adhesive film is formed in a contact hole, which exposes an upper electrode of the ferroelectric capacitor after conducting heat treatment in an oxidizing atmosphere, and a W layer is deposited by the CVD method using such TiN adhesive film as a hydrogen barrier and the contact hole is filled.

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