Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Reexamination Certificate
2007-03-19
2010-11-02
Pham, Thanh V (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
C257S041000, C257S642000, C257S759000, C257SE39007, C257SE51011, C257SE51015, C257SE27117, C438S082000, C438S099000, C438S623000, C438S666000, C438S780000
Reexamination Certificate
active
07825403
ABSTRACT:
A circuit board includes: a substrate; source and drain electrodes formed on the substrate; an organic semiconductor layer formed on the source and drain electrodes; a gate insulating layer formed on the organic semiconductor layer; and a gate electrode formed on the gate insulating layer, wherein: the substrate includes a first part, a second part, and a third part interposed between the first and second parts and a thickness of the first part or a thickness of the second part is greater than that of the third part; the source electrode is formed on the first part; the drain electrode is formed on the second part; a part of the organic semiconductor layer is formed on the third part; and a thickness of the gate insulating layer disposed on the first and second parts is smaller than that of the gate insulating layer disposed on the third part.
REFERENCES:
patent: 2007/0031990 (2007-02-01), Maekawa
patent: 2008/0048183 (2008-02-01), Ohsawa et al.
patent: 2003-309268 (2003-10-01), None
patent: 2005-203728 (2005-07-01), None
patent: 2006-041127 (2006-02-01), None
patent: WO2004-107473 (2004-12-01), None
Harness & Dickey & Pierce P.L.C.
Pham Thanh V
Seiko Epson Corporation
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