Thin film transistor substrate with divided gate electrode

Details Thin film transistor substrate with divided gate electrode Thin film transistor substrate with divided gate electrode

2009-03-26

2010-12-07

Ha, Nathan W (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

C257SE33053

Reexamination Certificate

active

07847290

ABSTRACT:
In forming a thin film transistor using multi-tone exposure, a wiring width of a foundational wiring is 40 μm or less, and a ratio of a wiring width of a foundational wiring in a dense case to a space between adjacent wirings is 1.7, preferably 1.0 or less.

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