Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2006-08-04
2010-12-28
Nguyen, VanThu (Department: 2824)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185240, C257S392000, C257S547000
Reexamination Certificate
active
07859905
ABSTRACT:
A method of manufacturing a semiconductor storage device according to an embodiment of the present invention includes forming dummy cells 611, to 618at a position adjacent to a reference cell 412, and implanting an impurity into the dummy cells 611, to 618using a mask that covers the reference cell 412. Here, the process of implanting the impurity is carried out so that the impurity exudes out of the dummy cells 611, to 618to the reference cell 412.
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Nguyen Van-Thu
Renesas Electronics Corporation
Sughrue & Mion, PLLC
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