Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2009-04-16
2010-11-09
Mandala, Victor A (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257SE45002, C257S004000, C365S148000
Reexamination Certificate
active
07829877
ABSTRACT:
A memory structure has an access transistor connected in series with a programmable resistive element, wherein the programmable resistive element comprises on a semiconductor substrate; an insulated layer with a cavity comprising: a first layer lining the lateral surfaces and the bottom of the said cavity and impermeable to the diffusion of metal; a second layer made of porous material on the said first layer; a third layer of metallic material allowing to realize a contact electrode susceptible to spread within the said formed porous material of the second layer. Diffusion of metallic ions within the said second layer is controlled by the joint action of an electric field and temperature. A manufacturing process is also described.
REFERENCES:
patent: 3217591 (1965-11-01), Barr et al.
patent: 3530441 (1970-09-01), Ovshinsky
patent: 7319235 (2008-01-01), Happ
patent: 2004/0228172 (2004-11-01), Rinerson et al.
patent: 2005/0006681 (2005-01-01), Okuno
patent: 2005/0285095 (2005-12-01), Happ
patent: 2006/0110530 (2006-05-01), Suzuki et al.
patent: 2007/0147102 (2007-06-01), Roehr
patent: 2008/0173975 (2008-07-01), Chen et al.
patent: 2005124788 (2005-12-01), None
Balakrishnan, M. et al., “A Low Power Non-Volatile Memory Element Based on Copper in Deposited Silicon Oxide,” Proceedings of the 2006 Non-Volatile Memory Technology Symposium (NVMTS), IEEE, pp. 104-110, Nov. 1, 2006.
Kozicki, M. et al., “A Low-Power Nonvolatile Switching Element Based on Copper-Tungsten Oxide Solid Electrolyte,” IEEE Transactions on Nanotechnology 5(5):535-544, Sep. 2006. .
Bossu Germain
Mazoyer Pascale
Iannucci Robert
Jorgenson Lisa K.
Mandala Victor A
Seed IP Law Group PLLC
STMicroelectronics S.A.
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