Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2005-11-28
2010-02-16
Louie, Wai-Sing (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S057000, C257S072000, C257S083000, C257S257000, C257SE31083
Reexamination Certificate
active
07663143
ABSTRACT:
A mask containing apertures therein which is used for fabricating a channel of a thin film transistor (TFT), wherein the pixel charging time for a TFT in a high-resolution liquid crystal display (LCD) device is reduced by minimizing the length of the channel in the TFT when the active region is made of amorphous silicon. The length of the channel can be minimized by exposing light through the apertures in an exposure mask when forming the channel.
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Birch & Stewart Kolasch & Birch, LLP
LG Display Co. Ltd.
Louie Wai-Sing
LandOfFree
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