Phase change material (PCM) memory devices with bipolar...

Details Phase change material (PCM) memory devices with bipolar... Phase change material (PCM) memory devices with bipolar...

2008-02-01

2010-11-16

Nguyen, Dao H (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S002000, C257S003000, C257S005000, C257S295000, C257SE21068, C257SE27004, C257SE45002, C438S095000, C438S096000, C438S097000

Reexamination Certificate

active

07834341

ABSTRACT:
Methods for fabricating highly compact PCM memory devices are described herein. The methods may include forming a bipolar junction transistor (BJT) structure on a substrate including creating a base of the BJT structure on the substrate and creating an emitter of the BJT structure on top of the base opposite of the substrate. A heating element may then be constructed on the emitter of the BJT structure, wherein the heating element includes a material to generate heat when provided with an electrical current from the emitter. A phase change material (PCM) cell may then be built on the heating element opposite of the BJT structure.

REFERENCES:
patent: 6597031 (2003-07-01), Kuge
patent: 7391642 (2008-06-01), Gordon et al.
patent: 7606056 (2009-10-01), Pellizzer et al.
patent: 1475840 (2004-10-01), None
patent: 1845567 (2007-10-01), None
Pellizzer F et al: “A 90mm phase change memory technology for stand-alone non-volatile memory applications” Symposium on VLSI Technology, Jun. 13-15, 2006, Honolulu, HI, USA, 2006, XP002491825 ISBN: 1-4244-0004-X paragraph “PCM cell structure” figures 1-4.

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