Soft program method in a non-volatile memory device

Static information storage and retrieval – Floating gate – Particular biasing

Reexamination Certificate

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C365S185180

Reexamination Certificate

active

07839692

ABSTRACT:
A soft program method in a non-volatile memory device for performing a soft program step so as to improve threshold voltage distribution of an erased cell is disclosed. The soft program method in a non-volatile memory device includes performing a soft program for increasing threshold voltages of memory cells by a given level, wherein an erase operation is performed about the memory cells, performing a verifying operation for verifying whether or not a cell programmed to a voltage more than a verifying voltage is existed in each of cell strings, and performing repeatedly the soft program until it is verified that whole cell strings have one or more cell programmed to the voltage more than the verifying voltage.

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patent: 2005/0024956 (2005-02-01), Tran et al.
patent: 2007/0263466 (2007-11-01), Morishita et al.
patent: 2008/0094871 (2008-04-01), Parkinson
patent: 2008/0304339 (2008-12-01), Dietrich et al.
patent: 05-081880 (1993-04-01), None

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