System and method for shielding of package on package (PoP)...

Active solid-state devices (e.g. – transistors – solid-state diode – With shielding

Reexamination Certificate

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Details

C257S660000, C257S686000, C257S690000, C257SE23114, C257SE23116, C257SE23133

Reexamination Certificate

active

07851894

ABSTRACT:
A semiconductor package has a first substrate having a plurality of metal traces. At least one die is electrically coupled to the first surface of the first substrate. A plurality of land pads is formed on the first surface of the first substrate. A mold compound encapsulates portions of the die and portions of the first surface of the first substrate. A conductive coating is applied to the mold compound and electrically coupled to at least one metal trace. A non-conductive coating is formed over the conductive coating and portions of the mold compound. A plurality of vias is formed through the non-conductive coating and the mold compound to expose the land pads.

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