Nonvolatile memory device and method of programming/reading...

Static information storage and retrieval – Floating gate – Particular connection

Reexamination Certificate

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C365S185170

Reexamination Certificate

active

07663918

ABSTRACT:
A nonvolatile memory device includes a first memory block including a plurality of memory cells provided between a first drain selection transistor and a source selection transistor; and a second memory block including a plurality of memory cells provided between a second drain selection transistor and the source selection transistor. The first and second memory blocks share the same source selection transistor that is supplied with a voltage via a source selection line.

REFERENCES:
patent: 5790457 (1998-08-01), Kim et al.
patent: 6285587 (2001-09-01), Kwon
patent: 6418059 (2002-07-01), Kreifels et al.
patent: 6570781 (2003-05-01), Lee et al.
patent: 6597605 (2003-07-01), Kreifels et al.
patent: 6714456 (2004-03-01), Ogura et al.
patent: 6803630 (2004-10-01), Pio et al.
patent: 2004/0165438 (2004-08-01), Chevallier
patent: 2000-222895 (2000-08-01), None
patent: 100197553 (1999-02-01), None
patent: 10-2001-0003655 (2001-01-01), None
patent: 200421349 (2004-10-01), None
patent: 200427071 (2004-12-01), None

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