Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2005-12-02
2010-02-16
Ho, Hoai V (Department: 2827)
Static information storage and retrieval
Floating gate
Particular connection
C365S185170
Reexamination Certificate
active
07663918
ABSTRACT:
A nonvolatile memory device includes a first memory block including a plurality of memory cells provided between a first drain selection transistor and a source selection transistor; and a second memory block including a plurality of memory cells provided between a second drain selection transistor and the source selection transistor. The first and second memory blocks share the same source selection transistor that is supplied with a voltage via a source selection line.
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Ho Hoai V
Hynix / Semiconductor Inc.
Lappas Jason
Townsend and Townsend / and Crew LLP
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