Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2006-03-31
2010-11-09
Jackson, Jr., Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257S530000, C257S004000, C365S148000, C365S153000
Reexamination Certificate
active
07829875
ABSTRACT:
A memory cell is described, the memory cell comprising a dielectric rupture antifuse and a layer of a resistivity-switching material arranged electrically in series, wherein the resistivity-switching material is a metal oxide or nitride compound, the compound including exactly one metal. The dielectric rupture antifuse is ruptured in a preconditioning step, forming a rupture region through the antifuse. The rupture region provides a narrow conductive path, serving to limit current to the resistivity-switching material, and improving control when the resistivity-switching layer is switched between higher- and lower-resistivity states.
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Jackson, Jr. Jerome
SanDisk 3D LLC
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