Nonvolatile rewritable memory cell comprising a...

Details Nonvolatile rewritable memory cell comprising a... Nonvolatile rewritable memory cell comprising a...

2006-03-31

2010-11-09

Jackson, Jr., Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S530000, C257S004000, C365S148000, C365S153000

Reexamination Certificate

active

07829875

ABSTRACT:
A memory cell is described, the memory cell comprising a dielectric rupture antifuse and a layer of a resistivity-switching material arranged electrically in series, wherein the resistivity-switching material is a metal oxide or nitride compound, the compound including exactly one metal. The dielectric rupture antifuse is ruptured in a preconditioning step, forming a rupture region through the antifuse. The rupture region provides a narrow conductive path, serving to limit current to the resistivity-switching material, and improving control when the resistivity-switching layer is switched between higher- and lower-resistivity states.

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