Methods of forming double pinned photodiodes

Details Methods of forming double pinned photodiodes Methods of forming double pinned photodiodes

2009-02-20

2010-11-09

Ngo, Ngan (Department: 2893)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S078000, C257SE21003, C257SE21537

Reexamination Certificate

active

07829368

ABSTRACT:
A pinned photodiode, which is a double pinned photodiode having increased electron capacitance, and a method for forming the same are disclosed. The invention provides a pinned photodiode structure comprising a substrate base over which is a first layer of semiconductor material. There is a base layer of a first conductivity type, wherein the base layer of a first conductivity type is the substrate base or is a doped layer over the substrate base. At least one doped region of a second conductivity type is below the surface of said first layer, and extends to form a first junction with the base layer. A doped surface layer of a first conductivity type is over the at least one region of a second conductivity type and forms a second junction with said at least one region of a second conductivity type.

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