Semiconductor device manufacturing method, semiconductor...

Details Semiconductor device manufacturing method, semiconductor... Semiconductor device manufacturing method, semiconductor...

2006-10-20

2010-02-02

Vinh, Lan (Department: 1792)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S706000, C438S710000, C216S067000

Reexamination Certificate

active

07655572

ABSTRACT:
Photoresist film is used as a mask, plasma etching of a SiO2film is selectively performed to a photoresist film, and a hole is formed. An etching gas comprising unsaturated fluorocarbon gas containing oxygen expressed with CxFyO (y/x is 1-1.5 at an integer in x, as for 4 or 5, and y) is used for the plasma etching. C4F4O gas and C4F6O gas are used for the unsaturated fluorocarbon gas containing oxygen, for example.

REFERENCES:
patent: 6635185 (2003-10-01), Demmin et al.
patent: 6842658 (2005-01-01), Izawa et al.
patent: 2002/0103563 (2002-08-01), Izawa et al.
patent: 2005/0011859 (2005-01-01), Ji et al.
patent: 1477681 (2004-02-01), None
patent: 1612305 (2005-05-01), None
patent: 1 498 941 (2005-01-01), None
patent: 1498941 (2005-01-01), None
patent: 2002-231596 (2002-08-01), None
patent: 2005-39277 (2005-02-01), None

Affiliated with

Also associated with

Rating

Semiconductor device manufacturing method, semiconductor... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device manufacturing method, semiconductor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device manufacturing method, semiconductor... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4168309