Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Insulating material
Reexamination Certificate
2008-05-07
2010-02-09
Smoot, Stephen W (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Insulating material
C257S772000, C257SE23020
Reexamination Certificate
active
07659614
ABSTRACT:
A method of forming packages containing SiC or other semiconductor devices bonded to other components or conductive surfaces utilizing transient liquid phase (TLP) bonding to create high temperature melting point bonds using in situ formed ternary or quaternary mixtures of conductive metals and the devices created using TLP bonds of ternary or quaternary materials. The compositions meet the conflicting requirements of an interconnect or joint that can be exposed to high temperature, and is thermally and electrically conductive, void and creep resistant, corrosion resistant, and reliable upon temperature and power cycling.
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