Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2008-05-09
2010-10-05
Lee, Calvin (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C438S653000, C438S686000
Reexamination Certificate
active
07808106
ABSTRACT:
A plasma enhanced atomic layer deposition (PEALD)-grown mixed-phase
ano-laminate barrier having the robust barrier properties of TaN with direct plate characteristics of Ru. Ru:TaN layers as thin as 5 nm act both as robust copper barrier and as a copper direct plating layer. Direct plated copper films exhibit preferred (111) orientation with the use of medium acid level electrolyte (0.8M H2SO4) and higher plating current density (10 mA/cm2) during the copper electrochemical deposition process. (111) texture in the direct plated copper films improves as Ru content in the mixed-phase barrier is increased. Direct plated copper films possess larger grain size characteristics as compared to copper electroplated on PVD copper seed. The filling characteristics in sub-65 nm features are equivalent for seeded copper and Ru:TaN barrier films without a seed layer.
REFERENCES:
patent: 6713373 (2004-03-01), Omstead
patent: 7264846 (2007-09-01), Chang et al.
patent: 7279432 (2007-10-01), Xi et al.
patent: 2004/0224475 (2004-11-01), Lee et al.
Lee Calvin
Semiconductor Research Corporation
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