Normally-off field-effect semiconductor device

Details Normally-off field-effect semiconductor device Normally-off field-effect semiconductor device

2007-02-12

2010-12-28

Sefer, A. (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257SE21407, C257SE21451

Reexamination Certificate

active

07859019

ABSTRACT:
A HEMT-type field-effect semiconductor device has a main semiconductor region formed on a silicon substrate. The main semiconductor region is a lamination of a buffer layer on the substrate, an electron transit layer on the buffer layer, and an electron supply layer on the electron transit layer. A source and a drain overlie the electron supply layer. A carrier storage layer overlies the electron supply layer via an insulator, and a gate overlies the carrier storage layer via another insulator. Upon application of an initialiser voltage to the gate, the carrier storage layer has stored therein a sufficient amount of carriers to hold the device off even without voltage application to the gate. An initialiser circuit is also disclosed whereby the device is initialized automatically for normally-off operation.

REFERENCES:
patent: 4404475 (1983-09-01), Drori et al.
patent: 5381028 (1995-01-01), Iwasa
patent: 2002/0171096 (2002-11-01), Wakejima et al.
patent: 2003/0016560 (2003-01-01), Kawamura
patent: 2005/0023555 (2005-02-01), Yoshida et al.
patent: 2007/0026587 (2007-02-01), Briere
patent: 2005-158889 (2005-06-01), None

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