Light-emitting diode and method for fabricating the same

Details Light-emitting diode and method for fabricating the same Light-emitting diode and method for fabricating the same

2009-04-20

2010-10-26

Dang, Trung (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

Active layer of indirect band gap semiconductor

C438S044000, C438S046000, C257SE21108

Reexamination Certificate

active

07821017

ABSTRACT:
The invention discloses a method for fabricating a light-emitting diode. In an embodiment of the invention, the method comprises the following steps of (a) preparing a substrate; (b) forming an epitaxial layer on the substrate, wherein the epitaxial layer has an upper surface; (c) forming a mask layer on a first region of the upper surface of the epitaxial layer; (d) forming a semiconductor multi-layer structure on a second region of the upper surface of the epitaxial layer, wherein the second region is distinct from the first region; (e) removing the mask layer formed on the first region of the upper surface of the epitaxial layer; and (f) forming an electrode on the first region of the upper surface of the epitaxial layer.

REFERENCES:
patent: 6030849 (2000-02-01), Hasegawa et al.
patent: 6342404 (2002-01-01), Shibata et al.
patent: 6806115 (2004-10-01), Koide et al.
patent: 2009/0103583 (2009-04-01), Tanaka et al.
patent: 2009/0173965 (2009-07-01), Shim et al.

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