Carbon nanotube transistor fabrication

Semiconductor device manufacturing: process – Making point contact device

Reexamination Certificate

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C977S843000, C977S938000, C257SE21585

Reexamination Certificate

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07736943

ABSTRACT:
During fabrication of single-walled carbon nanotube transistor devices, a porous template with numerous parallel pores is used to hold the single-walled carbon nanotubes. The porous template or porous structure may be anodized aluminum oxide or another material. A gate region may be provided one end or both ends of the porous structure. The gate electrode may be formed and extend into the porous structure.

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