Semiconductor device and semiconductor device manufacturing...

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration

Reexamination Certificate

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C257S637000, C257S640000, C257S774000, C257S752000, C257S763000, C257S758000, C257SE21577, C257SE21578, C257SE21588, C257SE21585, C257SE23145, C257SE21597, C257SE21627, C257SE21641

Reexamination Certificate

active

07834459

ABSTRACT:
An inventive semiconductor device includes at least three interconnection layers sequentially stacked without intervention of a via layer. At least one of the interconnection layers includes an interconnection and a via which connects interconnections provided in interconnection layers underlying and overlying the one interconnection layer.

REFERENCES:
patent: 4944836 (1990-07-01), Beyer et al.
patent: 5675187 (1997-10-01), Numata et al.
patent: 2004/0056344 (2004-03-01), Ogawa et al.
patent: 2004/0152334 (2004-08-01), Ohto et al.
patent: 2004/0173905 (2004-09-01), Kamoshima et al.
patent: 09-045782 (1997-02-01), None
patent: 2002-270691 (2002-09-01), None
patent: 2004-273523 (2004-09-01), None
patent: 2004-289004 (2004-10-01), None

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