Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2005-10-21
2010-11-16
Fahmy, Wael M (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257S637000, C257S640000, C257S774000, C257S752000, C257S763000, C257S758000, C257SE21577, C257SE21578, C257SE21588, C257SE21585, C257SE23145, C257SE21597, C257SE21627, C257SE21641
Reexamination Certificate
active
07834459
ABSTRACT:
An inventive semiconductor device includes at least three interconnection layers sequentially stacked without intervention of a via layer. At least one of the interconnection layers includes an interconnection and a via which connects interconnections provided in interconnection layers underlying and overlying the one interconnection layer.
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Armand Marc
Fahmy Wael M
Rabin & Berdo PC
Rohm & Co., Ltd.
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