Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Reexamination Certificate
2007-01-09
2010-10-26
Sarkar, Asok K (Department: 2891)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Responsive to electromagnetic radiation
C257SE21170, C257SE21586, C438S492000
Reexamination Certificate
active
07820474
ABSTRACT:
A chemical vapor deposition (CVD) method for selectively depositing GeSb materials onto a surface of a substrate is provided in which a metal that is capable of forming an eutectic alloy with germanium is used to catalyze the growth of the GeSb materials. A structure is also provided that includes a GeSb material located on preselected regions of a substrate. In accordance with the present invention, the GeSb material is sandwiched between a lower metal layer used to catalyze the growth of the GeSb and an upper surface metal layer that forms during the growth of the GeSb material.
REFERENCES:
patent: 3200490 (1965-08-01), Clymer
patent: 6416837 (2002-07-01), Kojima et al.
patent: 7314776 (2008-01-01), Johnson et al.
patent: 7405420 (2008-07-01), Wong et al.
patent: 2006/0172067 (2006-08-01), Ovshinsky et al.
patent: 2008/0020564 (2008-01-01), Bae et al.
patent: 2359640 (1975-06-01), None
patent: 2930789 (1980-02-01), None
patent: 1039448 (2000-09-01), None
Guha Supratik
Mc Feely Fenton R.
Yurkas John J.
Alexanian Vazken
International Business Machines - Corporation
Sarkar Asok K
Scully , Scott, Murphy & Presser, P.C.
LandOfFree
Metal catalyzed selective deposition of materials including... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Metal catalyzed selective deposition of materials including..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Metal catalyzed selective deposition of materials including... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4165564